| PART |
Description |
Maker |
| 6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
(HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits
3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED
3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED
LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合
Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合
Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封，小电流，宽电压，高增益光耦合 密封，低中频，宽V CC的，高增益光耦合器（密封，小电流，宽电压，高增益光耦合器）
NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合
DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封，中频，宽虚拟通道连接，高增益低光
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合
Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Agilent Technologies, Inc.
Avago Technologies, Ltd.
Analog Devices, Inc.
BI Technologies, Corp.
Coilcraft, Inc.
Harwin PLC
AGILENT TECHNOLOGIES INC
|
| EVAL-AD7707EB |
Evaluation Board for the AD7707 3V/5V, /-10V Input Range, 1mW, 3Channel, 16-Bit, Sigma Delta ADC
|
Analog Devices, Inc.
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
|
Lattice Semiconductor
|
| PMO-4015MN-42HXQ |
Sensitivity Range -42 ± 2 dB RL = 2.2 k Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
|
Mallory performance clu...
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| PMO-6022SN-42UQ |
Sensitivity Range -42 ± 3 dB RL = 2.2 k?Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
|
Mallory performance clu...
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| FD400 |
RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc
|
Leach
|
| S34MS16G2 |
16 Gb, 4-Bit ECC, ×8 I/O, and 1.8 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| LT1470 LTC1471CS LTC1470 LTC1470CS8 LTC1471 |
Single and Dual PCMCIA Protected 3.3V/5V VCC Switches
|
LINER[Linear Technology]
|
| BD3522EFV-E2 |
0. 7V to Vcc -1V, 4A 1ch Ultra Low Dropout Linear Regulator
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ROHM
|
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